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| SPICE MODEL: MMDT3904VC MMDT3904VC Lead-free Green DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features * * * * * Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 4) "Green Device" (Note 5) E1 B1 C2 C1 A B2 E2 BC SOT-563 Dim Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10 Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 1.00 1.60 0.60 0.20 Typ 0.25 1.20 1.60 A B C D Mechanical Data * * * * * * * * * Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): APK Ordering Information: See Below Date Code Information: See Page 2 Weight: 0.003 grams (approx.) K D G M H G H L K L M SEE NOTE 1 C1 B2 E2 All Dimensions in mm E1 B1 C2 Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 2) @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RJA Tj, TSTG Value 60 40 6.0 200 200 625 -55 to +150 Unit V V V mA mW C/W C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Ordering Information (Note 3) Device MMDT3904VC-7 Notes: Packaging SOT-563 Shipping 3000/Tape & Reel 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. No purposefully added lead. 5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30636 Rev. 3 - 2 1 of 3 www.diodes.com MMDT3904VC (c) Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6) @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 5.0 40 70 100 60 30 0.65 1.0 0.5 100 1.0 300 Max 50 50 300 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 5.0 Unit V V V nA nA Test Condition IC = 10A, IE = 0 IC = 1.0mA, IB = 0 IE = 10A, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 6. Short duration test pulse used to minimize self-heating. VCE(SAT) VBE(SAT) V V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT NF pF pF k x 10-4 S MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100A, RS = 1.0k, f = 1.0kHz td tr ts tf 35 35 200 50 ns ns ns ns VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Marking Information APK YM APK = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 2005 S Jun 6 Jul 7 2006 T Aug 8 2007 U Sep 9 Oct O 2008 V Nov N 2009 W Dec D DS30636 Rev. 3 - 2 2 of 3 www.diodes.com MMDT3904VC 250 15 f = 1MHz NEW PRODUCT Pd, POWER DISSIPATION (mW) 200 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 10 150 100 5 Cibo 50 Cobo 0 -50 0 50 100 150 0 0.1 1 10 100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Derating Curve - Total VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1 IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 100 TA = -25C TA = +25C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 IC IB = 10 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30636 Rev. 3 - 2 3 of 3 www.diodes.com MMDT3904VC |
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